Tutorial Speakers

We would like to invite tutorial proposals for the conference. The tutorial may address the recent development in Transportation Electrification. The topics may be any one of the topics of the conference. The duration of the tutorial is around 2-3 hours, but we also accept other duration as suggested by the speakers. The tutorial is live and with Q&A. Please send your proposal immediately via email: eric-cheng.cheng@polyu.edu.hk, or ITEC-AP2022@intl.zju.edu.cn. Your submission should include Title, Abstract, Biodata, Duration, the Impact and your experience. The organizer will offer a payment for those tutorials that are selected. The acceptance of your tutorial is usually within two weeks after your submission.


Tutorial Title:

Second Harmonic Current Reduction Techniques for Two-Stage Single-Phase Converters


Instructor Team:     

Xinbo Ruan, Fei Liu

Nanjing University of Aeronautics and Astronautics, Nanjing, China



In the two-stage single-phase power factor correction ac–dc converter, the input power pulsates at twice the line frequency; while in the two-stage single-phase dc–ac inverter, the output power pulsates at twice the output frequency. Meanwhile, in the two kinds of single-phase converters, the dc port holds constant power. Consequently, the pulsating power will result in second harmonic current (SHC) in the ac–dc converter and dc–ac inverter. The SHC will propagate into the dc-dc converter, the input dc voltage source or the dc load, leading to the degradation of the conversion efficiency of the dc-dc converter, the reduction of the energy conversion efficiency of the input dc voltage source, and shortened lifetime of the input dc voltage source or the dc load. To overcome these drawbacks, it is of necessity to suppress the SHC in the dc-dc converter, the dc voltage source or the dc load.

This tutorial will firstly reveal the generating and propagating mechanism of the SHC in the two-stage single-phase converters. Then, a series of control schemes to suppress the SHC in the dc-dc converter while improving the dynamic response of the system are proposed. Besides, the electrolytic capacitor-less SHC compensator will also be presented, with which the undesired electrolytic capacitor can be removed so as to prolong the lifetime of the overall system.


Instructor Biography:

Xinbo Ruan received the B.S. and Ph.D. degrees in electrical engineering from Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, China, in 1991 and 1996, respectively.

In 1996, he joined the Faculty of Electrical Engineering Teaching and Research Division, NUAA, where he became a Professor in the College of Automation Engineering in 2002. From August to October 2007, he was a Research Fellow in the Department of Electronic and Information Engineering, Hong Kong Polytechnic University, Hong Kong, China. From March 2008 to August 2011, he was also with the School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, China. He is the author or co-author of 13 books and more than 300 technical papers published in journals and conferences. His main research interests include resonant and soft-switching power converters, power converter topologies and control, grid-connected converters and system for renewable energy, modeling and stability of power converters, and envelop tracking power supply.

Prof. Ruan was a recipient of the Delta Scholarship by the Delta Environment and Education Fund in 2003 and was a recipient of the Special Appointed Professor of the Chang Jiang Scholars Program by the Ministry of Education, China, in 2007. From 2005 to 2013, and since 2017 again, he serves as a Vice President of the China Power Supply Society. From 2014 to 2016, he served as a Vice Chair of the Technical Committee on Renewable Energy Systems within the IEEE Industrial Electronics Society. Currently, he serves as an Editor for IEEE Journal of Emerging and Selected Topics on Power Electronics and an Associate Editor for IEEE Transactions on Industrial Electronics, IEEE Transactions on Power Electronics, IEEE Open Journal of Industrial Electronics Society, and IEEE Transactions on Circuits and Systems – II: Express Briefs. He was the General Chair of IPEMC-ECCE Asia 2020 and the General Secretary of IPEMC-ECCE Asia 2009, a Technical Program Committee Chair of the IEEE 7th Annual Energy Conversion Congress and Exposition (ECCE2015), and a Tutorial Committee Chair of the IEEE 12th Annual Energy Conversion Congress and Exposition (ECCE2020). He is an IEEE Fellow.


Fei Liu was born in Henan Province, China, in 1992. She received the B.S. and M.S. degrees in electrical engineering from Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, China, in 2015, and 2018, respectively, where she is currently working toward the Ph.D. degree in electrical engineering.

Her current research interests include resonant converters, cascaded power systems and renewable energy generation systems.



Tutorial Title:

A comprehensive introduction of silicon carbide devices: packaging and driving


Instructor Team:

1. Name: Prof. Alan Mantooth (Chair);

Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA

Email: mantooth@uark.edu

2. Name: Prof. Helong Li (Co-chair);

School of Electrical Engineering and Automation, Hefei University of Technology, Hefei, China;

Email: helong.li@hfut.edu.cn

3. Name: Prof. Shuang Zhao (Co-chair);

School of Electrical Engineering and Automation, Hefei University of Technology, Hefei, China;

Email: shuang.zhao@ieee.org



The industry is calling for next-generation power conversion systems with applications of wide bandgap devices due to their attractive features such as reduced switching loss, ultra-low reverse recovery current, and better thermal performance. Particularly, the voltage rating of SiC MOSFET can go to 20kV while that of silicon counterpart is 6.5 kV. It can significantly reduce the system complexity and increase the robustness. However, the application of silicon carbide (SiC) also introduces considerable challenges for the engineers due to their high switching speed. The high dv/dt may lead to high electromagnetic interference (EMI) noise and crosstalk noise which may lead to failure of the system. The high di/dt may interact with the parasitic inductance and result in large over-voltage on the between the leads. To address the aforementioned problems, the industry has dedicated much effort into exploring the emerging technologies which can be categorized into the following aspects: the novel packaging technology for the SiC power module, the paralleling of SiC devices/modules, improved gate driver, and optimized application design. This tutorial will elaborate the effort of University of Arkansas, Hefei University of Technology, and Aalborg University on developing the next-generation power conversion systems with wide bandgap devices. The tutorial speech will be organized in the following way:

  • The novel packaging technology for the silicon carbide. Utilization of novel package of semiconductor device can minimize the parasitics in the power loop and gate loop. Some computer-aided techniques are emerging in the industry to assist in the power module package layout design and the PCB layout design. In this regard, this presentation will demonstrate the design guidance of the SiC via elaborating the effort of University of Arkansas Power Electronics Team on developing the 10 kV SiC MOSFET package.
  • The paralleling of silicon carbide devices. The parallel-connected devices are usually employed to boost the system power rating since it is more cost-efficient than using a large power module. However, the mismatching parasitics on each power route will lead to the current imbalance and thus speed up aging of a specific device. In this presentation, the mathematic model will be given and the impacts of each parameter on current imbalance as well as mitigation methods will be investigated.
  • The novel gate driving technology of the SiC MOSFET. The gate driver design is critical to the system robustness particularly for the 10 kV SiC MOSFETs. Considering that increased switching slew is a major reason of the EMI noise, the cycle-by-cycle switching slew rate adjustment is necessary in some scenarios. In this chapter, the essence of switching slew rate adjustment is introduced. Several state-of-the-art active gate driver solutions are summarized. The effort of University of Arkansas Power Team in developing the novel gate drivers for the 10 kV MOSFET is demonstrated in details.


Tutorial Outline (3hr):

Chapter 1   50 mins,

From the very beginning: Packaging of the power semiconductor device

By Prof. Alan Mantooth, on-line

Contents: Prof. Mantooth will introduce the effort of UA team on developing the novel WBG devices packaging technologies: the 3D package of SiC MOSFET, optimization of 10kV SiC power MOSFET packaging structure, high-temperature SiC MSOFET packaging technology, and AI-assisted packaging design technology.

Chapter 2   45 mins,

One more step further: Challenges of parallel-connected SiC MOSFETs

By Prof. Helong Li, on-site

Contents: Parallel-connected devices are extensively applied in the industry to boost the power rating of the system. Generally, there are two different scenarios of parallel-connected MOSFET: parallel-connected dies inside a power module and parallel-connected discrete devices in a converter. However, the current is usually unbalance on the parallel-connected devices due to the mismatching electrical parameters. In this chapter, Prof. Li will introduce the effort of Aalborg University Team and HFUT Team in addressing the mismatching current. The mechanism and the solutions will be demonstrated. 

Coffee break: 20 mins

Chapter 3   45 mins,

Driving the future: Active gate driver – A novel solution to WBG

By Prof. Shuang Zhao, on-site

Contents: The application of silicon carbide MOSFET introduces the challenge in the design of the gate driver. The fast switching increases the electromagnetic interference (EMI) noise and the false-triggering risk, thus the system reliability is decreased. In this chapter, Prof. Zhao will present an emerging technology to address the EMI noise of SiC MOSFET, i.e., active gate driver. It will be demonstrated in the following way: the slew rate adjustment mechanism, the switching trajectory model of the SiC MOSFET, the state-of-the-art active gate driver methodologies, and our effort of the AGD hardware design. 

Q&A: 20 mins


Lecture Style and Requirements:

This tutorial will be conducted in the way combining traditional lecture, software/hardware demonstration. The team will bring the new package for 10 kV SiC MOSFET, the developed active gate drivers to the presentation and show to the audiences.

Target audience:

1. The researchers from academia who are working on the SiC power MOSFET and the applications.

2. The researchers and engineers from the industry who are developing SiC power modules, SiC power converters and drivers for EMI noise suppression.

3. The R&D staff who are engaged in the development of electric vehicles.

Difficulty level: Between Medium and Advanced. Audience should have knowledge about power semiconductor switching characterization, and basic knowledge about power converters. Particularly, the modeling of parallel-connected SiC and simulation-assisted package layout design involve complex mathematic calculation process. The active driving technology is emerging in the industry and it requires deep understanding of the semiconductor modeling for the audience.


Instructor Biography:

Homer Alan Mantooth, IEEE Fellow
H. Alan Mantooth (S'83 – M'90 – SM'97 – F’09) received the B.S. and M.S. degrees in electrical engineering from the University of Arkansas in 1985 and 1986, respectively, and the Ph.D. degree from the Georgia Institute of Technology in 1990. He then joined Analogy, a startup company in Oregon, where he focused on semiconductor device modeling and the research and development of modeling tools and techniques. In 1998, he joined the faculty of the Department of Electrical Engineering at the University of Arkansas, Fayetteville, where he currently holds the rank of Distinguished Professor. His research interests now include analog and mixed-signal IC design & CAD, semiconductor device modeling, power electronics, and power electronic packaging. Dr. Mantooth helped establish the National Center for Reliable Electric Power Transmission (NCREPT) at the UA in 2005. Professor Mantooth serves as the Executive Director for NCREPT as well as two of its centers of excellence: the NSF Industry/University Cooperative Research Center on GRid-connected Advanced Power Electronic Systems (GRAPES) and the Cybersecurity Center on Secure, Evolvable Energy Delivery Systems (SEEDS) funded by the U.S. Department of Energy. In 2015, he also helped to establish the UA’s first NSF Engineering Research Center entitled Power Optimization for Electro-Thermal Systems (POETS) that focuses on high power density systems for transportation applications. Dr. Mantooth holds the 21st Century Research Leadership Chair in Engineering. He serves as the President for the IEEE Power Electronics Society in 2019-20 and the Editor-in-Chief of IEEE Open Journal of Power Electronics. Dr. Mantooth is a Fellow of IEEE, a member of Tau Beta Pi and Eta Kappa Nu, and registered professional engineer in Arkansas.

Helong Li, IEEE Member

Helong Li received the B.S. and M.S. degrees in Electrical Engineering from Harbin Institute of Technology, Harbin, China, in 2010 and 2012, respectively. He received PhD degree in Electrical Engineering from Department of Energy Technology, Aalborg University, Denmark, in 2015. From 2016 to 2019, he worked for Dynex Semiconductor Ltd, Lincoln, UK, in the field of power semiconductor packaging, reliability, testing and reliability. From 2019 to 2021, he worked for CREE(now Wolfspeed), Munich, Germany, in the field of SiC devices in automotive application. Since Oct. 2021, he has been a professor with Hefei University of Technology, Hefei, China. His research interests include power semiconductor packaging, reliability, and power electronic applications.

Prof. Li published over 30 peer-review papers. He has more than 10 projects experiences on IGBT and SiC module design, process, and reliability. He supported mainstream automotive customers in Europe and has good insight on the requirements of SiC power modules in automotive application. He has been an instructor of Electric Circuit Analysis Course at HFUT since 2021.

Shuang Zhao, IEEE Member

Shuang Zhao (S’13–M’20) received the B.S. and M.S. degrees in electrical engineering from Wuhan University, Wuhan, China, in 2012 and 2015, respectively. He received his Ph.D. degree in electrical engineering from University of Arkansas, Fayetteville, AR, USA in 2019. In 2018, he was an intern at ABB US Corporate Research Center, Raleigh, NC, USA. In 2019, he joined Infineon Technologies, El Segundo, CA, USA where he was a Sr. Application Engineer for ATV. Since October 2021, he has been with Hefei University of Technology, Hefei, Anhui, China, where he is currently an associate professor in the Department of Electrical Engineering. His research interests include wide bandgap device application, gate driver, vehicle electrification, and distributed generation.

Dr. Zhao has published more than 20 peer-reviewed papers, holds a US patent and three pending China patents. He serves as a reviewer for multiple journals, a session chair for several IEEE conferences, and a guest editor of MDPI Electronics and Frontiers in Energy Research. He is a recipient of the Outstanding Presentation Award of APEC 2018.



Tutorial Title:

Advanced control, stability and reliability of vehicular electric power systems


Instructor Team:     

Fei Gao, Associate Professor at Shanghai Jiao Tong University

Qianwen Xu, Assistant Professor at KTH Royal Institute of Technology



Transportation sector is going through electrification with the development of electrical railway, electric aircraft, electric ship, electric vehicle, etc. With this trend, electrical power systems of electric transports will integrate new sources (e.g., fuel cells, batteries, solar PV), as well as a large number of power converters for the power conversion and motor drive. However, these new features also bring challenges, including the power balance under the fast changing load profiles, as well as the stability issue and reliability issue caused by the power electronic converters. This tutorial will present control, management and analysis strategies to address the above challenges. First, power management strategies and stability analysis will be presented. Second, advanced nonlinear control strategies are presented to stabilize the system under large signal disturbances. Finally, hierarchical reliability assessment tools are developed for reliability evaluation of components and the system. The proposed works provide a cost-effective, stable, reliable and sustainable power system for electric transports.

Duration: 2 hours



The tutorial will instruct the novel modeling, control, stability and reliability methods for vehicular power systems. The proposed works provide a cost-effective, stable, reliable and sustainable power system for electric transports.


Instructor Biography:

Fei Gao and Qianwen Xu are leading experts in modeling, control, stability and reliability analysis of vehicular power systems (especially more electric aircraft power systems). 

Qianwen Xu, Assistant Professor at the Electric Power and Energy Systems Division, KTH Royal Institute of Technology, Sweden. She received B.Sc. degree from Tianjin University, China in 2014 and PhD degree in electrical engineering from Nanyang Technological University, Singapore in 2018. Then she worked as a research assistant in Hong Kong Polytechnic University, a postdoc research fellow in Aalborg University in Denmark, a visiting researcher in Imperial College London and a Wallenberg-NTU Presidential Postdoc Fellow in Nanyang Technological University in Singapore, 2018-2020. Her area of expertise is advanced control, optimization, AI application and stability of sustainable power systems, microgrids and vehicular power systems. She has received over 30 million SEK research grant as PI from government agencies and industries, including Swedish Research Council (VR Starting Grant), Swedish Energy Agency, STINT, STandUP for Energy, C3.ai Digital Transformation Institute (sponsored by C3.ai and Microsoft), Digital Futures, etc. She has published over 50 technical papers, with 15 first-authored journal papers in top IEEE Transactions. She was also awarded Humboldt Research Fellowship, Excellent Doctorate Research Work, Best paper award in IEEE PEDG 2020, etc. She serves as Vice Chair in IEEE Power and Energy Society & Power Electronics Society, Sweden Chapter, and an Associate Editor for IEEE Transactions on Smart Grid and IEEE Journal of Emerging and Selected Topics in Power Electronics. 


Fei Gao Associate Professor at Shanghai Jiao Tong University, Shanghai, China.

He received his Ph.D. degree in Electrical Engineering from the Power Electronics, Machines, and Control (PEMC) Research Group, University of Nottingham, Nottingham, UK, in 2016. From Mar. 2010 to Sep. 2012, he worked in Jiangsu Electric Power Research Institute, Nanjing, State Grid Corporation of China. From 2016 to 2019, he was with Department of Engineering Science, University of Oxford, UK as a postdoctoral researcher. Since July 2019 he joined Shanghai Jiao Tong University as an associate professor. His current research interests include microgrids, wireless power transfer, more electric transportation systems. Dr. Gao won the European Union Clean Sky Best PhD Award in 2017 and IET Control & Automation Runner Up PhD Award in 2018.



Tutorial Title:

GaN power devices: Technology, characterizations and reliability



GaN power devices, with the merits of low switching/conduction losses and high switching frequency, can build up power electronic systems with enhanced efficiency and power density. Lateral GaN high-electron-mobility transistors (HEMTs) are currently dominating the scene of GaN power technology commercialization. However, they are still confronted with challenges of limited voltage/power ratings, trapping-induced threshold voltage (VTH) shift and dynamic on-resistance (RON) degradation, as well as gate driving issues for normally-off p-GaN gate HEMTs.  

In this tutorial, we will discuss the recent progress, primary challenges and prospects of GaN power devices, including: 1) normally-off GaN device technology; 2) bias- and temperature-induced gate instability (BTI) and long-time gate reliability issues; 3) bulk- and surface-trapping induced dynamic RON degradation, high-speed characterization techniques, and advanced device technology for trap suppression/compensation; 4) GaN power IC; 5) next-generation vertical GaN power devices with higher voltage/power ratings and superior dynamic performance.


Duration: 45 min


Instructor Biography:

Dr. Shu Yang received her B.S. degree from Fudan University and Ph.D. degree from the Hong Kong University of Science and Technology (HKUST). She was a visiting assistant professor at HKUST and a postdoctoral research associate at the University of Cambridge before joining Institute of Power Electronics Technology, Zhejiang University. Her research interests include advanced fabrication, characterization and reliability study of wide-bandgap GaN devices for next generation power electronics and RF power amplifiers. She has (co)authored over 90 papers in top-notch international journals and conferences, 2 book chapters, and delivered 11 invited talks at international conferences. Her research works have been featured in industry magazines Compound Semiconductor and Semiconductor Today. Dr. Yang is a recipient of IEEE ISPSD Charitat Young Researcher Award (1~2 awardees worldwide each year), Delta Young Scholar Award, Outstanding Young Scholar Award of China Power Supply Society and HKUST PhD Research Excellence Award. Dr. Yang has served as a member of IEEE EDS Power Devices and ICs Committee, TPC member of IEEE ISPSD (the top conference on power semiconductors, 2019~present), Co-Editor-in-Chief for PEDC, and Guest Associate Editor for IEEE JESTPE.



Tutorial Title:

Use of FBG sensors for the fully automated condition monitoring of the health of tracks and running gear of trains based on a case study of the Train Track Condition Monitoring system currently operating in SMRT, Singapore



During recent years Maintenance 4.0 has been gradually becoming the mainstream for mission critical components in the railways. This tutorial will present the three important elements of deploying Maintenance 4.0 in the railways – fully automated and continuous asset condition monitoring systems, the use of new generation of sensors, and the application of machine learning for predictive maintenance. Real life experience based on applications of Fibre Bragg Grating (FBG) sensor based systems in Hong Kong, Singapore, Mainland China and Sydney will also be shared with the participants.


Duration: 2 hours


Instructor Biography:

Prof. Kang Kuen LEE, Department of Electrical Engineering, The Hong Kong Polytechnic University

· Professor of Transportation Practice, Hong Kong Polytechnic University

· Deputy Director, China National Rail Transit Electrification and Automation Engineering Research Centre (Hong Kong Branch)

· Principal Systems Consultant, Ove Arup, Hong Kong

· Advisor, Sydney Metro Project, MTR Hong Kong

· Technical Mentor and Member of Technical Advisory Panel, SMRT, Singapore

KK has been working in the railway industry for over 50 years covering rolling stock and infrastructure maintenance, new lines and major asset upgrading/replacement projects, operations and business development in Hong Kong, Hangzhou, and 10+ other countries. KK and the research team in the Hong Kong Polytechnic University has also pioneered in the application of Fiber Bragg Grating sensors for the continuous condition monitoring of mission critical components of the railway. Recently he has also started R&D works on the deployment of machine learning and other AI techniques to develop predictive maintenance techniques for applications in Smart Railway Linear Infrastructure and Smart Trains.



Tutorial Title:

Electromagnetic Vibrations and Interference of Multiphase PM Motors: Mechanism, Analysis and Mitigation


Instructor Team:

1. Name: Prof. Siwei Cheng (Chair);

National Key Laboratory of Science and Technology on Vessel Integrated Power System, Naval University of Engineering, Wuhan, China


2. Name: Prof. Dong Jiang (Co-chair);

School of Electrical and Electronics Engineering, Huazhong University of Science and Technology, Wuhan, China

Email: jiangd@hust.edu.cn



High-performance electric motor drives have played a crucial role in enabling the growing trend of transportation electrification we are experiencing today. Some transportation sectors, such as electric-propelled ships and electric vehicles, have been calling for more advanced E-drive systems emitting even lower vibrations, acoustic noises and interference. However, high-frequency switching of PWM inverters inevitably produces high-frequency voltage harmonics, resulting in high-frequency electromagnetic vibration, acoustic noise, and interference, which are very difficult to harness.

This tutorial shares tutors’ insights and effort to this challenging problem by employing multhiphase permanent magnet motors and smart PWM techniques. The tutorial first explains the underlying mechanism for high-frequency electromagnetic vibrations of motors using the permanence distribution function (PDF), a novel tool to analyze magnetic fields within motors. Then, a comprehensive electromagnetic-and-structural analytical framework is established to predict motor high-frequency electromagnetic vibrations. Based on the understanding from aforementioned analysis, several PWM techniques are proposed that can effectively suppress or spread high-frequency vibration spectrum of multiphase PM motors.

For the high frequency electromagnetic interference (EMI) in multiphase PM motor drives system, this tutorial will introduce the approach of mitigation through variable switching frequency PWM for general EMI mitigation and common-mode (CM) voltage cancellation for CM EMI mitigation. The EMI can be mitigated without requirement of extra hardware like filter. 


Tutorial Outline (2.5hr):

Chapter 1   50 mins,

High-frequency Electromagnetic Vibrations of PM Motors: Mechanism, Analysis and Mitigation

By Prof. Siwei Cheng , on-site

Contents: Prof. Cheng will introduce the effort of his research team on understanding the fundamental mechanism of PWM-induced high-frequency electromagnetic vibrations of electric motors, establishing the electromagnetic and structural framework to precisely analyze high-frequency electromagnetic vibrations, as well as developing novel PWM techniques to suppress and mitigate those adverse acoustic effects caused by inverter switchings of motor drives.

Q&A: 20 mins

Coffee break: 10 mins

Chapter 2   50 mins

One more step further: Active EMI mitigation for multiphase motor drive: approach through PWM

By Prof. Dong Jiang, on-site

Contents: Prof. Jiang will introduce the effort of his research team on the understanding of his team on the principle of PWM’s impact on electromagnetic interference. Then, the approach for EMI mitigation through PWM is introduced. For overall EMI mitigation, the approach with variable switching frequency PWM is introduced, with consideration of system model. For common-mode EMI mitigation, the approach with multiphase CM voltage cancellation is introduced. EMI can be effectively reduced without using extra filter.

Q&A: 20 mins


Lecture Style and Requirements:

This tutorial will be conducted in lecture.

Target audience:

1. Researchers from academia who works on the vibration, acoustic noise and EMI mitigation of electric machines and drives.

2. Researchers and engineers from the industry who develops low-vibration and low-acoustic-noise electric machines and drives for electric vehicles or marine vessels.

3. Researchers and engineers from the industry who are interested in advanced analysis of electric machines and drives in general.


Instructor Biography:

Prof. Siwei Cheng
Siwei Cheng received the B.S. degree with the highest distinction in electrical engineering from Tsinghua University, Beijing, China, in 2007, and the M.S. and Ph.D. degrees in electrical engineering from the Georgia Institute of Technology, Atlanta, GA, USA, in 2009 and 2012, respectively. From Apr. 2012 to Nov. 2013, he was with sustainable mobility technology, Ford Motor Company, Dearborn, MI, USA, as a Motor Control Engineer. Since Feb. 2014, he has been with the National Key Laboratory of Science and Technology on Vessel Integrated Power System, Naval University of Engineering, Wuhan, China, where is now a full professor. His research interests include design, control and condition monitoring of high-performance electric machines and drives.

Dr. Cheng has been long engaged in the research and development of high-power and high-performance multiphase motor drive system for marine, aviation and vehicle applications. He has published about 55 peer-reviewed journal and conference articles, and is the holder of 16 China and international patents.

Dong Jiang

Dong Jiang received the B.S. and M.S. degrees in electrical engineering from Tsinghua University, Beijing, China, in 2005 and 2007, respectively. He received the Ph.D. degree in power electronics and motor drives in 2011 in the University of Tennessee, Knoxville, TN, USA. He was with the United Technologies Research Center (UTRC), East Hartford, CT, USA, as a Senior Research Scientist/Engineer, from January 2012 to July 2015. He has been with the Huazhong University of Science and Technology (HUST), Wuhan, China, as a Professor, since July 2015. His main research interests include power electronics and motor drives, with more than 100 published IEEE journal and conference papers and more than 60 granted patents in this area. Dr. Jiang was the recipient of six best paper awards in IEEE conferences. He is an Associate Editor for the IEEE Transactions on Industry Applications and the chair of IEEE Power Electronics Society (PELS) Wuhan Chapter and the vice Chair of IEEE PELS China. He is an IET fellow and IEEE Senior Member.

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